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 Description
The SE9205 is a four-channel Electro-Static Discharge (ESD) Protection device that is designed to protect sensitive IC's from damage or latch-up due to ESD stress. It is designed to replace multilayer varistors(MLVs) in portable applications such as cell phone, notebook computer, PDA's, digital still camera, and other similar electronic devices. It offers desirable characteristics for board level protection, including fast response time, low operating voltage, and low channel-to-channel capacitance. The SE9205 is housed in a SOT-23-6L package that is ideal for use in portable electronics such as cell phone, PDA's, notebook computer, and digital still cameras.
Features
Four-channel protection. Low channel-to-channel capacitance at 3pF typical. Working voltage: Vdd=5V is optional. Low leakage current. Available in SOT-23-6L packages.
Application
USB removable devices
PDAs/Cell Phones
Notebooks & Handhelds Portable Instrumentation Digital camera Peripherals MP3 Players
Pin Configuration
Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice (c) Seaward Electronics Inc., 2006. * www.seawardinc.com * Page 1
Absolute Maximum Ratings(1)
Supply Input Voltage (VDD) ........................... +5V Power Dissipation (PD) ........... Internally Limited
(3)
Operating Ratings(2)
Supply Input Voltage (VDD) ............................ 5.0V Junction Temperature (TJ) ............... 0C to +125C Package Thermal Resistance 230C/W (SOT-23-6L)
Junction Temperature (TJ) ......................... 150C Lead Temperature (soldering, 5 sec.) ........... 260C Storage Temperature (TS) ........... -40C to +150C Electrical Characteristics (TJ = 25C) Symbol VDD ILEAK Parameter Reverse Standaoff Voltage Reverse Standaoff Leakage current Signal Clamp Voltage VC Positive Negative Clamp Voltage during ESD MIL-STD-883 Method 3015 ( HBM ) 8kV 8kV ESD Test Level (4) IEC-61000-2, Contact Discharge MIL-STD-883 Method 3015 ( HBM ) Channel-to-GND Capacitance Channel-to-Channel Capacitance Turn on / off time Temperature Range Operating Storage Diode Dynamic Resistance Forward Conduction Reverse Conduction
Conditions Min I = 10A V = 5.0V --
Typ 5 1
Max 100
Units V nA
I =10mA I = 10mA
5.6 -1.2
6.8 -0.8
8 -0.4
V
---
12 -8
---
V
20 30 0V @ 1 MHz 0V @ 1 MHz ----
--4 3 1
------
kV pF pF ns
-40 -65
---
85 150
---
1 1.4
---
V
Note 1: Exceeding the absolute maximum rating may damage the device. Note 2: The device is not guaranteed to function outside its operating rating. Note 3: The maximum allowable power dissipation at any TA (ambient temperature) is calculated using: PD(MAX) = (TJ(MAX) - TA)/JA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. Note 4: ESD Voltage applied between channel pins and ground, one pin at a time; all other channel pins are open; all ground pins are grounded. Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice (c) Seaward Electronics Inc., 2006. * www.seawardinc.com * Page 2
OUTLINE DRAWING SOT-23-6L
Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice (c) Seaward Electronics Inc., 2006. * www.seawardinc.com * Page 3
Contact Information
Seaward Electronics Incorporated - China Room 1605, Building 1, International Pioneering Park, #1 Shangdi Xinxi Rd. Haidian District, Beijing 100085, China Tel: 86-10-8289-5700/01/05 Fax: 86-10-8289-5706 Email: sales@seawardinc.com.cn Seaward Electronics Corporation - Taiwan 2F, #181, Sec. 3, Min Quan East Rd. Taipei, Taiwan R.O.C Tel: 886-2-2712-0307 Fax: 886-2-2712-0191 Email: sales@seawardinc.com.tw Seaward Electronics Incorporated - North America 1512 Centre Pointe Dr. Milpitas, CA95035, USA Tel: 1-408-821-6600 Last Updated - 5/23/2007
Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice (c) Seaward Electronics Inc., 2006. * www.seawardinc.com * Page 4


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